PART |
Description |
Maker |
OMD60L60FL OMD150N06FL |
TRANSISTOR | IGBT POWER MODULE | FULL BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|全桥| 600V的五(巴西)国际消费电子展| 75A条一c TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 60V V(BR)DSS | 150A I(D)
|
Unisonic Technologies Co., Ltd.
|
MP4025 |
Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
|
ET1275 1SI50A100 |
TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1KV V(BR)CEO | 15A I(C) TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1KV V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块|独立| 1KV交五(巴西)总裁| 50A条一(c
|
IXYS, Corp.
|
MP4514 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA[Toshiba Semiconductor]
|
MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
2DI150Z-100 |
Power transistor module for high power switching, AC and DC motor control applications
|
COLLMER SEMICONDUCTOR INC FUJI[Fuji Electric] FUJI ELECTRIC HOLDINGS CO., LTD.
|
1DI200Z-120 |
Power transistor module for power switching, AC and DC motor controls
|
COLLMER SEMICONDUCTOR INC FUJI[Fuji Electric] FUJI ELECTRIC HOLDINGS CO., LTD.
|
STE50DE100 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 V - 50 A - 0.026 W POWER MODULE 混合发射器开关双极晶体管内酰胺酶1000 50 0.026 W电源模块 From old datasheet system HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT" 1000 V - 50 A - 0.026 Ohm POWER MODULE
|
STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
6DI50M-050 |
POWER TRANSISTOR MODULE
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
2DI75M-050 |
POWER TRANSISTOR MODULE
|
Fuji Electric
|
2DI200D-100 |
POWER TRANSISTOR MODULE
|
FUJI[Fuji Electric]
|
1DI300D100 1DI300A120 |
Power Transistor Module
|
Fuji Electric
|